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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION With TO-126 package Complement to type 2SB794/795 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO PARAMETER VCEO TOR NDU ICO E SEM ANG INCH Base CONDITIONS VALUE 150 60 Collector-base voltage Open emitter 2SD985 Collector-emitter voltage Open base 2SD986 80 8 A A 1.5 3.0 0.15 Ta=25ae 1.0 Emitter -base voltage Collector current Collector current-Peak Base current Open collector UNIT V V VEBO IC ICM IB V A A A PT Total power dissipation TC=25ae 10 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SD985 ICBO Collector cut-off current 2SD986 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCB=80V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=1.0A ; VCE=2V 1000 2000 30000 2.0 mA CONDITIONS IC=1.0A; IB=1.0mA IC=1.0A; IB=1.0mA VCB=60V; IE=0 10 |I A MIN TYP. MAX 1.5 2.0 UNIT V V SYMBOL VCEsat VBEsat Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time 0.5 Storage time Fall time IC=1.0A;IB1=-IB2=1.0mA VCC=50V; RL=50| 1.0 1.0 |I |I |I s s s hFE-2 Classifications M 2000-5000 L 4000-10000 K 8000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD985 2SD986 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
Price & Availability of 2SD985
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